View IRF6622_715704.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97199
IRF6622
DirectFET Power MOSFET
l l l l l l l l l
RoHs Compliant Containing No Lead and Bromide Low Profile (<0.6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Socket Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
3.8nC
RDS(on) Qgs2
1.6nC
RDS(on) Qoss
7.7nC
25V max 20V max 4.9m@ 10V 6.8m@ 4.5V
Qrr
7.1nC
Vgs(th)
1.8V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile. The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
20
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
25 20 15 12 59 120 13 12
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 10 12 VDS= 20V VDS= 13V
A
mJ A
ID= 12A
15 10 5 T J = 25C 0 3 4 5 6 7
ID = 15A
VDS= 5.0V
T J = 125C
8
9
14
VGS, Gate -to -Source Voltage (V)
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 12A.
www.irf.com
1
04/04/06
IRF6622
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 --- --- --- 1.35 --- --- --- --- --- 55 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 17 4.9 6.8 1.8 -5.9 --- --- --- --- --- 11 2.5 1.6 3.8 3.1 5.4 7.7 1.8 13 87 14 5.6 1450 380 210 --- --- 6.3 8.9 2.35 --- 1.0 150 100 -100 --- 17 --- --- --- --- --- --- 3.1 --- --- --- --- --- --- --- pF VGS = 0V VDS = 13V = 1.0MHz ns nC
Conditions
VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 15A c VGS = 4.5V, ID = 12A c V mV/C A nA S VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 12A VDS = 13V nC VGS = 4.5V ID = 12A See Fig. 15 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 12A Clamped Inductive Load c VDS = VGS, ID = 25A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 10 7.1 120 1.0 15 11 V ns nC
Min.
---
Typ. Max. Units
--- 2.7 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V c TJ = 25C, IF = 12A di/dt = 500A/s c
Notes:
Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6622
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
f
Parameter
Max.
2.2 1.4 34 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
g dg eg fg
Parameter
Typ.
--- 12.5 20 --- 1.0 0.017
Max.
58 --- --- 3.7 ---
Units
C/W
A
W/C
100 D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 A 1 2 3 4 5 5 A
Ri (C/W)
1.620 2.141 22.289 20.046 11.914
i (sec)
0.000126 0.001354 0.375850 7.41
1
0.02 0.01
J
Ci= i/Ri Ci= i/Ri
0.1
SINGLE PULSE ( THERMAL RESPONSE )
99 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
www.irf.com
3
IRF6622
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1 2.5V
10 2.5V 1
0.1
60s PULSE WIDTH
0.01 0.1 1 Tj = 25C 10 100 1000
0.1 1
60s PULSE WIDTH
Tj = 150C 10 100 1000
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C 1
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0 ID = 15A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current ()
1.5
V GS = 10V
1.0
V GS = 4.5V 0.5
0.1 1 2 3 4 5
-60 -40 -20 0
20 40 60 80 100 120 140 160
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 7. Normalized On-Resistance vs. Temperature
50 T J = 25C 40
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance(pF)
Ciss 1000 Coss Crss
30
Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
20
10
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 0 20 40 60 80 100 120
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
www.irf.com
IRF6622
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
T J = 150C T J = 25C T J = -40C
1
1 VGS = 0V 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
0.1
T A = 25C
1msec 10msec
T J = 150C
Single Pulse 0.01 0.01 0.10 1.00 10.00
100.00
Fig 10. Typical Source-Drain Diode Forward Voltage
60
Typical VGS(th) Gate threshold Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) ID = 25A
50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID = 50A
ID = 100A ID = 250A ID = 1mA ID = 1.0A
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 3.7A 5.3A BOTTOM 12A TOP
50 40 30 20 10 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
IRF6622
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6622
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D G D S
D
D
www.irf.com
7
IRF6622
DirectFET Outline Dimension, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.52 E 0.48 0.82 F 0.78 0.92 G 0.88 0.82 H 0.78 N/A J N/A 0.97 K 0.93 2.10 L 2.00 0.59 M 0.48 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.019 0.020 0.031 0.032 0.035 0.036 0.031 0.032 N/A N/A 0.037 0.038 0.079 0.083 0.019 0.023 0.001 0.003 0.003 0.007
DirectFET Part Marking
8
www.irf.com
IRF6622
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6622). For 1000 parts on 7" reel, order IRF6622TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX MIN MIN CODE MIN MIN MAX MAX MAX A N.C 6.9 12.992 330.0 177.77 N.C N.C N.C B 0.75 0.795 N.C 20.2 19.06 N.C N.C N.C C 0.53 0.504 0.50 12.8 13.5 0.520 12.8 13.2 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 2.31 3.937 N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.47 0.488 N.C 12.4 11.9 0.567 12.01 14.4 H 0.47 0.469 N.C 11.9 11.9 0.606 12.01 15.4
Loaded Tape Feed Direction
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MAX 0.311 0.319 8.10 0.154 0.161 4.10 0.469 0.484 12.30 0.215 0.219 5.55 0.158 0.165 4.20 0.197 0.205 5.20 0.059 N.C N.C 0.059 0.063 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/06
www.irf.com
9

▲Up To Search▲

Price & Availability of IRF6622

	To Download IRF6622 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .